This course focuses on the foundation for the understanding and analysis of electronic devices and systems for various applications. It will cover design and analysis of semiconductor junction, MOS devices, development of circuit models and comprehending the limitations of different models. The semiconductor fundamentals, doping and carrier densities, carrier transport and generation-recombination along with “semiconductor equations” will be covered. This mainly includes construction, properties and working principles of diodes, Bipolar Junction Transistor (BJT) and Field Effect Transistor (FET). Various configurations of BJT and FET along with their applications will also be covered.